Vishay Semiconductor Diodes Division - BYG10J-E3/TR

KEY Part #: K6452662

BYG10J-E3/TR Pricing (USD) [833970pcs Stock]

  • 1 pcs$0.04724
  • 1,800 pcs$0.04701
  • 3,600 pcs$0.04231
  • 5,400 pcs$0.03996
  • 12,600 pcs$0.03643
  • 45,000 pcs$0.03408

Part Number:
BYG10J-E3/TR
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE AVALANCHE 600V 1.5A. Rectifiers 1.5 Amp 600 Volt
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Diodes - RF, Diodes - Rectifiers - Single, Transistors - IGBTs - Single, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BYG10J-E3/TR electronic components. BYG10J-E3/TR can be shipped within 24 hours after order. If you have any demands for BYG10J-E3/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10J-E3/TR Product Attributes

Part Number : BYG10J-E3/TR
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE AVALANCHE 600V 1.5A
Series : -
Part Status : Active
Diode Type : Avalanche
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 4µs
Current - Reverse Leakage @ Vr : 1µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 150°C

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