IXBX50N360HV Pricing (USD) [1614pcs Stock]
- 1 pcs$28.09451
- 10 pcs$26.27328
- 25 pcs$24.29916
- 100 pcs$22.78046
- Part Number:
- IXBX50N360HV
- Manufacturer:
- IXYS
- Detailed description:
- IGBT 3600V 125A 660W TO-247PLUS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Single, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Single and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in IXYS IXBX50N360HV electronic components. IXBX50N360HV can be shipped within 24 hours after order. If you have any demands for IXBX50N360HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXBX50N360HV Product Attributes
Part Number :
IXBX50N360HV
Manufacturer :
IXYS
Description :
IGBT 3600V 125A 660W TO-247PLUS
Series :
BIMOSFET™
Part Status :
Active
IGBT Type :
-
Voltage - Collector Emitter Breakdown (Max) :
3600V
Current - Collector (Ic) (Max) :
125A
Current - Collector Pulsed (Icm) :
420A
Vce(on) (Max) @ Vge, Ic :
2.9V @ 15V, 50A
Power - Max :
660W
Switching Energy :
-
Input Type :
Standard
Gate Charge :
210nC
Td (on/off) @ 25°C :
46ns/205ns
Test Condition :
960V, 50A, 5 Ohm, 15V
Reverse Recovery Time (trr) :
1.7µs
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3 Variant
Supplier Device Package :
TO-247PLUS-HV
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