IXYS - IXTP120P065T

KEY Part #: K6394879

IXTP120P065T Pricing (USD) [24449pcs Stock]

  • 1 pcs$1.94824
  • 50 pcs$1.93855

Part Number:
IXTP120P065T
Manufacturer:
IXYS
Detailed description:
MOSFET P-CH 65V 120A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in IXYS IXTP120P065T electronic components. IXTP120P065T can be shipped within 24 hours after order. If you have any demands for IXTP120P065T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP120P065T Product Attributes

Part Number : IXTP120P065T
Manufacturer : IXYS
Description : MOSFET P-CH 65V 120A TO-220
Series : TrenchP™
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 65V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 10 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 185nC @ 10V
Vgs (Max) : ±15V
Input Capacitance (Ciss) (Max) @ Vds : 13200pF @ 25V
FET Feature : -
Power Dissipation (Max) : 298W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3