GeneSiC Semiconductor - GB10SLT12-220

KEY Part #: K6444956

GB10SLT12-220 Pricing (USD) [2272pcs Stock]

  • 600 pcs$4.19513

Part Number:
GB10SLT12-220
Manufacturer:
GeneSiC Semiconductor
Detailed description:
DIODE SCHOTTKY 1200V 10A TO220AC. Schottky Diodes & Rectifiers 1200V 10A SiC Schottky Rectifier
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor GB10SLT12-220 electronic components. GB10SLT12-220 can be shipped within 24 hours after order. If you have any demands for GB10SLT12-220, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GB10SLT12-220 Product Attributes

Part Number : GB10SLT12-220
Manufacturer : GeneSiC Semiconductor
Description : DIODE SCHOTTKY 1200V 10A TO220AC
Series : -
Part Status : Obsolete
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 10A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 10A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 40µA @ 1200V
Capacitance @ Vr, F : 520pF @ 1V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220AC
Operating Temperature - Junction : -55°C ~ 175°C
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