Vishay Siliconix - IRFBF20L

KEY Part #: K6414586

[8369pcs Stock]


    Part Number:
    IRFBF20L
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET N-CH 900V 1.7A TO-262.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Thyristors - TRIACs, Transistors - Special Purpose, Transistors - Programmable Unijunction and Transistors - Bipolar (BJT) - Arrays ...
    Competitive Advantage:
    We specialize in Vishay Siliconix IRFBF20L electronic components. IRFBF20L can be shipped within 24 hours after order. If you have any demands for IRFBF20L, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFBF20L Product Attributes

    Part Number : IRFBF20L
    Manufacturer : Vishay Siliconix
    Description : MOSFET N-CH 900V 1.7A TO-262
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 900V
    Current - Continuous Drain (Id) @ 25°C : 1.7A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 8 Ohm @ 1A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 490pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 3.1W (Ta), 54W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : I2PAK
    Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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