Vishay Semiconductor Diodes Division - ESH1B-E3/5AT

KEY Part #: K6433161

ESH1B-E3/5AT Pricing (USD) [617832pcs Stock]

  • 1 pcs$0.05987
  • 7,500 pcs$0.05425

Part Number:
ESH1B-E3/5AT
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 1A DO214AC. Rectifiers 100 Volt 1.0A 25ns Glass Passivated
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs, Transistors - Programmable Unijunction and Transistors - JFETs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division ESH1B-E3/5AT electronic components. ESH1B-E3/5AT can be shipped within 24 hours after order. If you have any demands for ESH1B-E3/5AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH1B-E3/5AT Product Attributes

Part Number : ESH1B-E3/5AT
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 1A DO214AC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 900mV @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Current - Reverse Leakage @ Vr : 1µA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 175°C

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