IPG20N06S2L35ATMA1 Pricing (USD) [176731pcs Stock]
- 1 pcs$0.20929
- 5,000 pcs$0.19933
- Part Number:
- IPG20N06S2L35ATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET 2N-CH 55V 20A TDSON-8-4.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - TRIACs, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPG20N06S2L35ATMA1 electronic components. IPG20N06S2L35ATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N06S2L35ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N06S2L35ATMA1 Product Attributes
Part Number :
IPG20N06S2L35ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 55V 20A TDSON-8-4
Series :
Automotive, AEC-Q101, OptiMOS™
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
20A
Rds On (Max) @ Id, Vgs :
35 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
2V @ 27µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
790pF @ 25V
Power - Max :
65W
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerVDFN
Supplier Device Package :
PG-TDSON-8-4
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