IXYS - IXFN420N10T

KEY Part #: K6397941

IXFN420N10T Pricing (USD) [4204pcs Stock]

  • 1 pcs$11.33232
  • 10 pcs$10.48402
  • 100 pcs$8.95401

Part Number:
IXFN420N10T
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 100V 420A SOT-227.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Transistors - IGBTs - Modules and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in IXYS IXFN420N10T electronic components. IXFN420N10T can be shipped within 24 hours after order. If you have any demands for IXFN420N10T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN420N10T Product Attributes

Part Number : IXFN420N10T
Manufacturer : IXYS
Description : MOSFET N-CH 100V 420A SOT-227
Series : GigaMOS™ HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 420A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id : 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 670nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 47000pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1070W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC

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