IPA80R650CEXKSA2 Pricing (USD) [42509pcs Stock]
- 1 pcs$0.84456
- 10 pcs$0.76094
- 100 pcs$0.61155
- 500 pcs$0.47566
- 1,000 pcs$0.39412
- Part Number:
- IPA80R650CEXKSA2
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 800V TO-220-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPA80R650CEXKSA2 electronic components. IPA80R650CEXKSA2 can be shipped within 24 hours after order. If you have any demands for IPA80R650CEXKSA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPA80R650CEXKSA2 Product Attributes
Part Number :
IPA80R650CEXKSA2
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 800V TO-220-3
Series :
CoolMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id :
3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
33W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3F
Package / Case :
TO-220-3 Full Pack
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