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Microsemi Corporation - APTM120H29FG

KEY Part #: K6522643

APTM120H29FG Pricing (USD) [414pcs Stock]

  • 1 pcs$147.39494
  • 10 pcs$140.27951
  • 25 pcs$135.19703
Part Number:
APTM120H29FG
Manufacturer:
Microsemi Corporation
Detailed description:
MOSFET 4N-CH 1200V 34A SP6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Power Driver Modules and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Microsemi Corporation APTM120H29FG electronic components. APTM120H29FG can be shipped within 24 hours after order. If you have any demands for APTM120H29FG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM120H29FG Product Attributes

Part Number : APTM120H29FG
Manufacturer : Microsemi Corporation
Description : MOSFET 4N-CH 1200V 34A SP6
Series : POWER MOS 7®
Part Status : Active
FET Type : 4 N-Channel (H-Bridge)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C : 34A
Rds On (Max) @ Id, Vgs : 348 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id : 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs : 374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 10300pF @ 25V
Power - Max : 780W
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP6
Supplier Device Package : SP6

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