ON Semiconductor - FDT457N

KEY Part #: K6416026

FDT457N Pricing (USD) [254929pcs Stock]

  • 1 pcs$0.43482
  • 10 pcs$0.38131
  • 100 pcs$0.27827
  • 500 pcs$0.20613
  • 1,000 pcs$0.16490

Part Number:
FDT457N
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 30V 5A SOT-223.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Single, Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays, Power Driver Modules, Transistors - FETs, MOSFETs - RF and Transistors - JFETs ...
Competitive Advantage:
We specialize in ON Semiconductor FDT457N electronic components. FDT457N can be shipped within 24 hours after order. If you have any demands for FDT457N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDT457N Product Attributes

Part Number : FDT457N
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 30V 5A SOT-223
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.9nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 235pF @ 15V
FET Feature : -
Power Dissipation (Max) : 3W (Ta)
Operating Temperature : -65°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-223-4
Package / Case : TO-261-4, TO-261AA

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