Vishay Siliconix - IRF610LPBF

KEY Part #: K6393261

IRF610LPBF Pricing (USD) [98701pcs Stock]

  • 1 pcs$0.39615
  • 1,000 pcs$0.37278

Part Number:
IRF610LPBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 200V 3.3A TO-262.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - Bridge Rectifiers, Diodes - RF, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules, Transistors - Special Purpose, Transistors - IGBTs - Modules and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Vishay Siliconix IRF610LPBF electronic components. IRF610LPBF can be shipped within 24 hours after order. If you have any demands for IRF610LPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF610LPBF Product Attributes

Part Number : IRF610LPBF
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 200V 3.3A TO-262
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3W (Ta), 36W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I2PAK
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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