FQPF7N80C Pricing (USD) [35025pcs Stock]
- 1 pcs$1.17667
- 1,000 pcs$0.34096
- Part Number:
- FQPF7N80C
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 800V 6.6A TO-220F.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQPF7N80C electronic components. FQPF7N80C can be shipped within 24 hours after order. If you have any demands for FQPF7N80C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQPF7N80C Product Attributes
Part Number :
FQPF7N80C
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 800V 6.6A TO-220F
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.9 Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1680pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
56W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220F
Package / Case :
TO-220-3 Full Pack
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