Microsemi Corporation - JANTXV1N5417US

KEY Part #: K6433025

JANTXV1N5417US Pricing (USD) [3274pcs Stock]

  • 1 pcs$13.22967
  • 100 pcs$11.60316

Part Number:
JANTXV1N5417US
Manufacturer:
Microsemi Corporation
Detailed description:
DIODE GEN PURP 200V 3A D5B. Diodes - General Purpose, Power, Switching Rectifier
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs, Thyristors - DIACs, SIDACs, Power Driver Modules and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Microsemi Corporation JANTXV1N5417US electronic components. JANTXV1N5417US can be shipped within 24 hours after order. If you have any demands for JANTXV1N5417US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTXV1N5417US Product Attributes

Part Number : JANTXV1N5417US
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 200V 3A D5B
Series : Military, MIL-PRF-19500/411
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 1.5V @ 9A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 150ns
Current - Reverse Leakage @ Vr : 1µA @ 200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SQ-MELF, B
Supplier Device Package : D-5B
Operating Temperature - Junction : -65°C ~ 175°C

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