Manufacturer :
GeneSiC Semiconductor
Description :
DIODE GEN PURP 200V 200A 3 TOWER
Diode Configuration :
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max) :
200V
Current - Average Rectified (Io) (per Diode) :
200A
Voltage - Forward (Vf) (Max) @ If :
1.3V @ 200A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Current - Reverse Leakage @ Vr :
25µA @ 200V
Operating Temperature - Junction :
-55°C ~ 150°C
Mounting Type :
Chassis Mount
Package / Case :
Three Tower
Supplier Device Package :
Three Tower