Vishay Semiconductor Diodes Division - VS-8ETH06-1-M3

KEY Part #: K6436159

VS-8ETH06-1-M3 Pricing (USD) [169513pcs Stock]

  • 1 pcs$0.21820

Part Number:
VS-8ETH06-1-M3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 8A TO262. Rectifiers 600V 8A IF TO-262AA 90A IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Transistors - Special Purpose, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-8ETH06-1-M3 electronic components. VS-8ETH06-1-M3 can be shipped within 24 hours after order. If you have any demands for VS-8ETH06-1-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-8ETH06-1-M3 Product Attributes

Part Number : VS-8ETH06-1-M3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 8A TO262
Series : FRED Pt®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 8A
Voltage - Forward (Vf) (Max) @ If : 2.4V @ 8A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Current - Reverse Leakage @ Vr : 50µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package : TO-262AA
Operating Temperature - Junction : -65°C ~ 175°C

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