Vishay Semiconductor Diodes Division - BYV26E-TAP

KEY Part #: K6455998

BYV26E-TAP Pricing (USD) [445338pcs Stock]

  • 1 pcs$0.08452
  • 5,000 pcs$0.08410
  • 10,000 pcs$0.08305

Part Number:
BYV26E-TAP
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE AVALANCHE 1000V 1A SOD57. Rectifiers 1.0 Amp 1000 Volt 30 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BYV26E-TAP electronic components. BYV26E-TAP can be shipped within 24 hours after order. If you have any demands for BYV26E-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYV26E-TAP Product Attributes

Part Number : BYV26E-TAP
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE AVALANCHE 1000V 1A SOD57
Series : -
Part Status : Active
Diode Type : Avalanche
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 2.5V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Current - Reverse Leakage @ Vr : 5µA @ 1000V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : SOD-57, Axial
Supplier Device Package : SOD-57
Operating Temperature - Junction : -55°C ~ 175°C

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