RFN2LAM6STR Pricing (USD) [493751pcs Stock]
- 1 pcs$0.08281
- 3,000 pcs$0.08240
- 6,000 pcs$0.07709
- 15,000 pcs$0.07177
- Part Number:
- RFN2LAM6STR
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- DIODE GEN PURP 600V 1.5A PMDTM. Diodes - General Purpose, Power, Switching 600V Vr 1.5A Io Fast Recovery Diode
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RFN2LAM6STR electronic components. RFN2LAM6STR can be shipped within 24 hours after order. If you have any demands for RFN2LAM6STR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RFN2LAM6STR Product Attributes
Part Number :
RFN2LAM6STR
Manufacturer :
Rohm Semiconductor
Description :
DIODE GEN PURP 600V 1.5A PMDTM
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Current - Average Rectified (Io) :
1.5A
Voltage - Forward (Vf) (Max) @ If :
1.55V @ 1.5A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
35ns
Current - Reverse Leakage @ Vr :
1µA @ 600V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
SOD-128
Supplier Device Package :
PMDTM
Operating Temperature - Junction :
150°C (Max)
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