Toshiba Semiconductor and Storage - TPC8113(TE12L,Q)

KEY Part #: K6407761

[861pcs Stock]


    Part Number:
    TPC8113(TE12L,Q)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    MOSFET P-CH 30V 11A SOP8 2-6J1B.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Power Driver Modules, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - Single ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage TPC8113(TE12L,Q) electronic components. TPC8113(TE12L,Q) can be shipped within 24 hours after order. If you have any demands for TPC8113(TE12L,Q), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TPC8113(TE12L,Q) Product Attributes

    Part Number : TPC8113(TE12L,Q)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : MOSFET P-CH 30V 11A SOP8 2-6J1B
    Series : -
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 11A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
    Rds On (Max) @ Id, Vgs : 10 mOhm @ 5.5A, 10V
    Vgs(th) (Max) @ Id : 2V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 107nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 4500pF @ 10V
    FET Feature : -
    Power Dissipation (Max) : 1W (Ta)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-SOP (5.5x6.0)
    Package / Case : 8-SOIC (0.173", 4.40mm Width)

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