BSM50GB120DN2HOSA1 Pricing (USD) [1241pcs Stock]
- 1 pcs$34.90688
- Part Number:
- BSM50GB120DN2HOSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- IGBT 2 MED POWER 34MM-1.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSM50GB120DN2HOSA1 electronic components. BSM50GB120DN2HOSA1 can be shipped within 24 hours after order. If you have any demands for BSM50GB120DN2HOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM50GB120DN2HOSA1 Product Attributes
Part Number :
BSM50GB120DN2HOSA1
Manufacturer :
Infineon Technologies
Description :
IGBT 2 MED POWER 34MM-1
Series :
-
Part Status :
Not For New Designs
IGBT Type :
-
Configuration :
Half Bridge
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
78A
Power - Max :
400W
Vce(on) (Max) @ Vge, Ic :
3V @ 15V, 50A
Current - Collector Cutoff (Max) :
1mA
Input Capacitance (Cies) @ Vce :
3.3nF @ 25V
Input :
Standard
NTC Thermistor :
No
Operating Temperature :
150°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
Module
Supplier Device Package :
Module
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