Vishay Siliconix - SI7846DP-T1-E3

KEY Part #: K6417363

SI7846DP-T1-E3 Pricing (USD) [90621pcs Stock]

  • 1 pcs$0.43148
  • 3,000 pcs$0.34417

Part Number:
SI7846DP-T1-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 150V 4A PPAK SO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Power Driver Modules, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Siliconix SI7846DP-T1-E3 electronic components. SI7846DP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7846DP-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7846DP-T1-E3 Product Attributes

Part Number : SI7846DP-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 150V 4A PPAK SO-8
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 1.9W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SO-8
Package / Case : PowerPAK® SO-8