DMN3730UFB4-7B Pricing (USD) [1432838pcs Stock]
- 1 pcs$0.02581
- Part Number:
- DMN3730UFB4-7B
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET BVDSS 25V-30V X1-DFN1006.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN3730UFB4-7B electronic components. DMN3730UFB4-7B can be shipped within 24 hours after order. If you have any demands for DMN3730UFB4-7B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3730UFB4-7B Product Attributes
Part Number :
DMN3730UFB4-7B
Manufacturer :
Diodes Incorporated
Description :
MOSFET BVDSS 25V-30V X1-DFN1006
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
460 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id :
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.6nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
64.3pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
470mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
X2-DFN1006-3
Package / Case :
3-XFDFN
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