Vishay Semiconductor Diodes Division - VS-8EWS12STR-M3

KEY Part #: K6434605

VS-8EWS12STR-M3 Pricing (USD) [59709pcs Stock]

  • 1 pcs$0.65486
  • 2,000 pcs$0.56949

Part Number:
VS-8EWS12STR-M3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 1.2KV 8A D-PAK. Schottky Diodes & Rectifiers New Input Diodes - D-PAK-e3
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Modules and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-8EWS12STR-M3 electronic components. VS-8EWS12STR-M3 can be shipped within 24 hours after order. If you have any demands for VS-8EWS12STR-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-8EWS12STR-M3 Product Attributes

Part Number : VS-8EWS12STR-M3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1.2KV 8A D-PAK
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 8A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 8A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 50µA @ 1200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : D-PAK (TO-252AA)
Operating Temperature - Junction : -55°C ~ 150°C

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