Infineon Technologies - IRL2203NPBF

KEY Part #: K6399043

IRL2203NPBF Pricing (USD) [53136pcs Stock]

  • 1 pcs$0.67314
  • 10 pcs$0.59746
  • 100 pcs$0.47212
  • 500 pcs$0.34635
  • 1,000 pcs$0.27343

Part Number:
IRL2203NPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 30V 116A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IRL2203NPBF electronic components. IRL2203NPBF can be shipped within 24 hours after order. If you have any demands for IRL2203NPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRL2203NPBF Product Attributes

Part Number : IRL2203NPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 30V 116A TO-220AB
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 60nC @ 4.5V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 3290pF @ 25V
FET Feature : -
Power Dissipation (Max) : 180W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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