IXYS - IXTP110N055T2

KEY Part #: K6394589

IXTP110N055T2 Pricing (USD) [56679pcs Stock]

  • 1 pcs$0.98254
  • 10 pcs$0.88846
  • 100 pcs$0.71403
  • 500 pcs$0.55535
  • 1,000 pcs$0.46014

Part Number:
IXTP110N055T2
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 55V 110A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single and Power Driver Modules ...
Competitive Advantage:
We specialize in IXYS IXTP110N055T2 electronic components. IXTP110N055T2 can be shipped within 24 hours after order. If you have any demands for IXTP110N055T2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP110N055T2 Product Attributes

Part Number : IXTP110N055T2
Manufacturer : IXYS
Description : MOSFET N-CH 55V 110A TO-220
Series : TrenchT2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 57nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3060pF @ 25V
FET Feature : -
Power Dissipation (Max) : 180W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3