FQT4N20LTF Pricing (USD) [370865pcs Stock]
- 1 pcs$0.11139
- 4,000 pcs$0.11083
- Part Number:
- FQT4N20LTF
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 200V 0.85A SOT-223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQT4N20LTF electronic components. FQT4N20LTF can be shipped within 24 hours after order. If you have any demands for FQT4N20LTF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQT4N20LTF Product Attributes
Part Number :
FQT4N20LTF
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 200V 0.85A SOT-223
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
1.35 Ohm @ 425mA, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5.2nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
310pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.2W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-223-4
Package / Case :
TO-261-4, TO-261AA
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