Toshiba Semiconductor and Storage - TK5A60D(STA4,Q,M)

KEY Part #: K6418710

TK5A60D(STA4,Q,M) Pricing (USD) [73893pcs Stock]

  • 1 pcs$0.58499
  • 50 pcs$0.58208

Part Number:
TK5A60D(STA4,Q,M)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 600V 5A TO-220SIS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - IGBTs - Single, Power Driver Modules, Diodes - Zener - Single, Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK5A60D(STA4,Q,M) electronic components. TK5A60D(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK5A60D(STA4,Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK5A60D(STA4,Q,M) Product Attributes

Part Number : TK5A60D(STA4,Q,M)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 600V 5A TO-220SIS
Series : π-MOSVII
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.43 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 35W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack