FESB8JTHE3/45 Pricing (USD) [134072pcs Stock]
- 1 pcs$0.27588
- 1,000 pcs$0.25116
- Part Number:
- FESB8JTHE3/45
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8.0A 600 Volt 50ns 125 Amp IFSM
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division FESB8JTHE3/45 electronic components. FESB8JTHE3/45 can be shipped within 24 hours after order. If you have any demands for FESB8JTHE3/45, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FESB8JTHE3/45 Product Attributes
Part Number :
FESB8JTHE3/45
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 600V 8A TO263AB
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Current - Average Rectified (Io) :
8A
Voltage - Forward (Vf) (Max) @ If :
1.5V @ 8A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Current - Reverse Leakage @ Vr :
10µA @ 600V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package :
TO-263AB
Operating Temperature - Junction :
-55°C ~ 150°C
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