IXFP6N120P Pricing (USD) [13592pcs Stock]
- 1 pcs$3.33169
- 10 pcs$2.99940
- 100 pcs$2.46629
- 500 pcs$2.06634
- 1,000 pcs$1.79971
- Part Number:
- IXFP6N120P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1200V 6A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Transistors - Special Purpose and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXFP6N120P electronic components. IXFP6N120P can be shipped within 24 hours after order. If you have any demands for IXFP6N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP6N120P Product Attributes
Part Number :
IXFP6N120P
Manufacturer :
IXYS
Description :
MOSFET N-CH 1200V 6A TO-220AB
Series :
HiPerFET™, PolarP2™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
92nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2830pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
250W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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