DF200R12KE3HOSA1 Pricing (USD) [992pcs Stock]
- 1 pcs$46.80541
- Part Number:
- DF200R12KE3HOSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- IGBT MODULE VCES 1200V 200A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies DF200R12KE3HOSA1 electronic components. DF200R12KE3HOSA1 can be shipped within 24 hours after order. If you have any demands for DF200R12KE3HOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DF200R12KE3HOSA1 Product Attributes
Part Number :
DF200R12KE3HOSA1
Manufacturer :
Infineon Technologies
Description :
IGBT MODULE VCES 1200V 200A
Series :
-
Part Status :
Active
IGBT Type :
-
Configuration :
Single
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
-
Power - Max :
1040W
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 200A
Current - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
14nF @ 25V
Input :
Standard
NTC Thermistor :
No
Operating Temperature :
-40°C ~ 125°C
Mounting Type :
Chassis Mount
Package / Case :
Module
Supplier Device Package :
Module
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