[1141pcs Stock]
- Part Number:
- IDB10S60C
- Manufacturer:
- Infineon Technologies
- Detailed description:
- DIODE SILICON 600V 10A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Special Purpose, Transistors - IGBTs - Single, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IDB10S60C electronic components. IDB10S60C can be shipped within 24 hours after order. If you have any demands for IDB10S60C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDB10S60C Product Attributes
Part Number :
IDB10S60C
Manufacturer :
Infineon Technologies
Description :
DIODE SILICON 600V 10A D2PAK
Series :
CoolSiC™
Part Status :
Obsolete
Diode Type :
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) :
600V
Current - Average Rectified (Io) :
10A (DC)
Voltage - Forward (Vf) (Max) @ If :
1.7V @ 10A
Speed :
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) :
0ns
Current - Reverse Leakage @ Vr :
140µA @ 600V
Capacitance @ Vr, F :
480pF @ 1V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package :
D2PAK
Operating Temperature - Junction :
-55°C ~ 175°C
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