Toshiba Semiconductor and Storage - TPC8211(TE12L,Q,M)

KEY Part #: K6524218

[3905pcs Stock]


    Part Number:
    TPC8211(TE12L,Q,M)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    MOSFET 2N-CH 30V 5.5A SOP8.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Thyristors - SCRs, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Power Driver Modules and Transistors - FETs, MOSFETs - Single ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage TPC8211(TE12L,Q,M) electronic components. TPC8211(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for TPC8211(TE12L,Q,M), Please submit a Request for Quotation here or send us an email:
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    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TPC8211(TE12L,Q,M) Product Attributes

    Part Number : TPC8211(TE12L,Q,M)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : MOSFET 2N-CH 30V 5.5A SOP8
    Series : -
    Part Status : Obsolete
    FET Type : 2 N-Channel (Dual)
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 5.5A
    Rds On (Max) @ Id, Vgs : 36 mOhm @ 3A, 10V
    Vgs(th) (Max) @ Id : 2.5V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
    Input Capacitance (Ciss) (Max) @ Vds : 1250pF @ 10V
    Power - Max : 450mW
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-SOIC (0.173", 4.40mm Width)
    Supplier Device Package : 8-SOP (5.5x6.0)