IXYS - IXTH180N10T

KEY Part #: K6398347

IXTH180N10T Pricing (USD) [20736pcs Stock]

  • 1 pcs$2.18587
  • 10 pcs$1.95142
  • 100 pcs$1.60001
  • 500 pcs$1.29560
  • 1,000 pcs$1.03664

Part Number:
IXTH180N10T
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 100V 180A TO-247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in IXYS IXTH180N10T electronic components. IXTH180N10T can be shipped within 24 hours after order. If you have any demands for IXTH180N10T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH180N10T Product Attributes

Part Number : IXTH180N10T
Manufacturer : IXYS
Description : MOSFET N-CH 100V 180A TO-247
Series : TrenchMV™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.4 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 151nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 6900pF @ 25V
FET Feature : -
Power Dissipation (Max) : 480W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247 (IXTH)
Package / Case : TO-247-3

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