Toshiba Semiconductor and Storage - 2SA1020-Y(T6TR,A,F

KEY Part #: K6388913

[7399pcs Stock]


    Part Number:
    2SA1020-Y(T6TR,A,F
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    TRANS PNP 2A 50V TO226-3.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Transistors - Special Purpose, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers and Transistors - FETs, MOSFETs - Arrays ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage 2SA1020-Y(T6TR,A,F electronic components. 2SA1020-Y(T6TR,A,F can be shipped within 24 hours after order. If you have any demands for 2SA1020-Y(T6TR,A,F, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2SA1020-Y(T6TR,A,F Product Attributes

    Part Number : 2SA1020-Y(T6TR,A,F
    Manufacturer : Toshiba Semiconductor and Storage
    Description : TRANS PNP 2A 50V TO226-3
    Series : -
    Part Status : Obsolete
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 2A
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Vce Saturation (Max) @ Ib, Ic : 500mV @ 50mA, 1A
    Current - Collector Cutoff (Max) : 1µA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 500mA, 2V
    Power - Max : 900mW
    Frequency - Transition : 100MHz
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 Long Body
    Supplier Device Package : TO-92MOD

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