Microsemi Corporation - JANTXV1N5807

KEY Part #: K6433754

JANTXV1N5807 Pricing (USD) [5070pcs Stock]

  • 1 pcs$8.58515
  • 102 pcs$8.54244

Part Number:
JANTXV1N5807
Manufacturer:
Microsemi Corporation
Detailed description:
DIODE GEN PURP 50V 3A AXIAL. ESD Suppressors / TVS Diodes D MET 6A SFST 50V HRV 6FFTV
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Power Driver Modules, Transistors - Programmable Unijunction and Transistors - JFETs ...
Competitive Advantage:
We specialize in Microsemi Corporation JANTXV1N5807 electronic components. JANTXV1N5807 can be shipped within 24 hours after order. If you have any demands for JANTXV1N5807, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTXV1N5807 Product Attributes

Part Number : JANTXV1N5807
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 50V 3A AXIAL
Series : Military, MIL-PRF-19500/477
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 875mV @ 4A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 5µA @ 50V
Capacitance @ Vr, F : 65pF @ 10V, 1MHz
Mounting Type : Through Hole
Package / Case : B, Axial
Supplier Device Package : -
Operating Temperature - Junction : -65°C ~ 175°C

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