DMTH6004LPSQ-13 Pricing (USD) [100619pcs Stock]
- 1 pcs$0.38860
- 2,500 pcs$0.32397
- Part Number:
- DMTH6004LPSQ-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 60V 100A POWERDI5060.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Thyristors - SCRs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMTH6004LPSQ-13 electronic components. DMTH6004LPSQ-13 can be shipped within 24 hours after order. If you have any demands for DMTH6004LPSQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH6004LPSQ-13 Product Attributes
Part Number :
DMTH6004LPSQ-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 60V 100A POWERDI5060
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.1 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
47.4nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4515pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
2.6W (Ta), 138W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerDI5060-8
Package / Case :
8-PowerTDFN
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