Diodes Incorporated - ZXMN6A11DN8TA

KEY Part #: K6523180

ZXMN6A11DN8TA Pricing (USD) [173187pcs Stock]

  • 1 pcs$0.21357
  • 500 pcs$0.19577

Part Number:
ZXMN6A11DN8TA
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET 2N-CH 60V 2.5A 8-SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Diodes - RF and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Diodes Incorporated ZXMN6A11DN8TA electronic components. ZXMN6A11DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMN6A11DN8TA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN6A11DN8TA Product Attributes

Part Number : ZXMN6A11DN8TA
Manufacturer : Diodes Incorporated
Description : MOSFET 2N-CH 60V 2.5A 8-SOIC
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 2.5A
Rds On (Max) @ Id, Vgs : 120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs : 5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 330pF @ 40V
Power - Max : 1.8W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOP