Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 55V 5.1A 8SOIC
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
5.1A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
780pF @ 25V
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package :
8-SO