IPP65R099C6XKSA1 Pricing (USD) [2455pcs Stock]
- 500 pcs$1.84433
- Part Number:
- IPP65R099C6XKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 650V 38A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPP65R099C6XKSA1 electronic components. IPP65R099C6XKSA1 can be shipped within 24 hours after order. If you have any demands for IPP65R099C6XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP65R099C6XKSA1 Product Attributes
Part Number :
IPP65R099C6XKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 38A TO220
Series :
CoolMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
99 mOhm @ 12.8A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2780pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
278W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220-3
Package / Case :
TO-220-3
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