RN1318(TE85L,F) Pricing (USD) [1936260pcs Stock]
- 1 pcs$0.01920
- 3,000 pcs$0.01910
- 6,000 pcs$0.01661
- 15,000 pcs$0.01412
- 30,000 pcs$0.01329
- 75,000 pcs$0.01246
- 150,000 pcs$0.01107
- Part Number:
- RN1318(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- TRANS PREBIAS NPN 0.1W USM.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Diodes - Zener - Arrays and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage RN1318(TE85L,F) electronic components. RN1318(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN1318(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1318(TE85L,F) Product Attributes
Part Number :
RN1318(TE85L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS PREBIAS NPN 0.1W USM
Series :
-
Part Status :
Active
Transistor Type :
NPN - Pre-Biased
Current - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Resistor - Base (R1) :
47 kOhms
Resistor - Emitter Base (R2) :
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) :
500nA
Frequency - Transition :
250MHz
Power - Max :
100mW
Mounting Type :
Surface Mount
Package / Case :
SC-70, SOT-323
Supplier Device Package :
USM
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