RDR005N25TL Pricing (USD) [424325pcs Stock]
- 1 pcs$0.09636
- 3,000 pcs$0.09589
- Part Number:
- RDR005N25TL
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 250V 0.5A SC-96-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RDR005N25TL electronic components. RDR005N25TL can be shipped within 24 hours after order. If you have any demands for RDR005N25TL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RDR005N25TL Product Attributes
Part Number :
RDR005N25TL
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 250V 0.5A SC-96-3
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
250V
Current - Continuous Drain (Id) @ 25°C :
500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
8.8 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id :
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
3.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
70pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
540mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TSMT3
Package / Case :
SC-96
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