Infineon Technologies - FD-DF80R12W1H3_B52

KEY Part #: K6532730

FD-DF80R12W1H3_B52 Pricing (USD) [2473pcs Stock]

  • 1 pcs$17.50946

Part Number:
FD-DF80R12W1H3_B52
Manufacturer:
Infineon Technologies
Detailed description:
IGBT MODULE VCES 1200V 40A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Diodes - Zener - Single, Thyristors - SCRs and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies FD-DF80R12W1H3_B52 electronic components. FD-DF80R12W1H3_B52 can be shipped within 24 hours after order. If you have any demands for FD-DF80R12W1H3_B52, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FD-DF80R12W1H3_B52 Product Attributes

Part Number : FD-DF80R12W1H3_B52
Manufacturer : Infineon Technologies
Description : IGBT MODULE VCES 1200V 40A
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Configuration : Single
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 40A
Power - Max : 215W
Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 40A
Current - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 235nF @ 25V
Input : Standard
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 125°C
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module

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