Vishay Siliconix - SISS06DN-T1-GE3

KEY Part #: K6396189

SISS06DN-T1-GE3 Pricing (USD) [172802pcs Stock]

  • 1 pcs$0.21404

Part Number:
SISS06DN-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CHAN 30 V POWERPAK 1212.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction, Diodes - Zener - Single and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Vishay Siliconix SISS06DN-T1-GE3 electronic components. SISS06DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS06DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SISS06DN-T1-GE3 Product Attributes

Part Number : SISS06DN-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CHAN 30 V POWERPAK 1212
Series : TrenchFET® Gen IV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 47.6A (Ta), 172.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.38 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds : 3660pF @ 15V
FET Feature : -
Power Dissipation (Max) : 5W (Ta), 65.7W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® 1212-8S
Package / Case : PowerPAK® 1212-8S

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