SISS06DN-T1-GE3 Pricing (USD) [172802pcs Stock]
- 1 pcs$0.21404
- Part Number:
- SISS06DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CHAN 30 V POWERPAK 1212.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SISS06DN-T1-GE3 electronic components. SISS06DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS06DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS06DN-T1-GE3 Product Attributes
Part Number :
SISS06DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHAN 30 V POWERPAK 1212
Series :
TrenchFET® Gen IV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
47.6A (Ta), 172.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.38 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Vgs (Max) :
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds :
3660pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
5W (Ta), 65.7W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® 1212-8S
Package / Case :
PowerPAK® 1212-8S
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