Infineon Technologies - AUIRF1405ZS-7P

KEY Part #: K6417843

AUIRF1405ZS-7P Pricing (USD) [43031pcs Stock]

  • 1 pcs$1.19690
  • 50 pcs$1.19095

Part Number:
AUIRF1405ZS-7P
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 55V 120A D2PAK-7.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Special Purpose, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Infineon Technologies AUIRF1405ZS-7P electronic components. AUIRF1405ZS-7P can be shipped within 24 hours after order. If you have any demands for AUIRF1405ZS-7P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AUIRF1405ZS-7P Product Attributes

Part Number : AUIRF1405ZS-7P
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 55V 120A D2PAK-7
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.9 mOhm @ 88A, 10V
Vgs(th) (Max) @ Id : 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 230nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5360pF @ 25V
FET Feature : -
Power Dissipation (Max) : 230W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK (7-Lead)
Package / Case : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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