[2494pcs Stock]
- Part Number:
- JANTXV1N6628US
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- DIODE GEN PURP 660V 1.75A D5B.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Diodes - RF, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Modules and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Microsemi Corporation JANTXV1N6628US electronic components. JANTXV1N6628US can be shipped within 24 hours after order. If you have any demands for JANTXV1N6628US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JANTXV1N6628US Product Attributes
Part Number :
JANTXV1N6628US
Manufacturer :
Microsemi Corporation
Description :
DIODE GEN PURP 660V 1.75A D5B
Series :
Military, MIL-PRF-19500/590
Part Status :
Discontinued at Digi-Key
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
660V
Current - Average Rectified (Io) :
1.75A
Voltage - Forward (Vf) (Max) @ If :
1.35V @ 2A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
30ns
Current - Reverse Leakage @ Vr :
2µA @ 660V
Capacitance @ Vr, F :
40pF @ 10V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
SQ-MELF, E
Supplier Device Package :
D-5B
Operating Temperature - Junction :
-65°C ~ 150°C
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