STMicroelectronics - STGWT40H65DFB

KEY Part #: K6422866

STGWT40H65DFB Pricing (USD) [21953pcs Stock]

  • 1 pcs$1.87738
  • 10 pcs$1.68480
  • 100 pcs$1.38058
  • 500 pcs$1.17526
  • 1,000 pcs$0.94035

Part Number:
STGWT40H65DFB
Manufacturer:
STMicroelectronics
Detailed description:
IGBT 650V 80A 283W TO3P-3L.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays and Diodes - Rectifiers - Single ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGWT40H65DFB Product Attributes

Part Number : STGWT40H65DFB
Manufacturer : STMicroelectronics
Description : IGBT 650V 80A 283W TO3P-3L
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) : 650V
Current - Collector (Ic) (Max) : 80A
Current - Collector Pulsed (Icm) : 160A
Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 40A
Power - Max : 283W
Switching Energy : 498µJ (on), 363µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 40ns/142ns
Test Condition : 400V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) : 62ns
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-3P-3, SC-65-3
Supplier Device Package : TO-3P