NVF3055L108T1G Pricing (USD) [255591pcs Stock]
- 1 pcs$0.14471
- 1,000 pcs$0.13156
- Part Number:
- NVF3055L108T1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 60V 3A SOT223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Power Driver Modules, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Thyristors - SCRs, Diodes - Rectifiers - Single and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVF3055L108T1G electronic components. NVF3055L108T1G can be shipped within 24 hours after order. If you have any demands for NVF3055L108T1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVF3055L108T1G Product Attributes
Part Number :
NVF3055L108T1G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 60V 3A SOT223
Series :
Automotive, AEC-Q101
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
120 mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 5V
Vgs (Max) :
±15V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1.3W (Ta)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-223
Package / Case :
TO-261-4, TO-261AA
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