IXFK24N100Q3 Pricing (USD) [4427pcs Stock]
- 1 pcs$11.25356
- 10 pcs$10.22966
- 100 pcs$8.69521
- Part Number:
- IXFK24N100Q3
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1000V 24A TO-264.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Transistors - Special Purpose and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in IXYS IXFK24N100Q3 electronic components. IXFK24N100Q3 can be shipped within 24 hours after order. If you have any demands for IXFK24N100Q3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFK24N100Q3 Product Attributes
Part Number :
IXFK24N100Q3
Manufacturer :
IXYS
Description :
MOSFET N-CH 1000V 24A TO-264
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
440 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
7200pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1000W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-264AA (IXFK)
Package / Case :
TO-264-3, TO-264AA
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