Diodes Incorporated - 1N4006G-T

KEY Part #: K6452367

1N4006G-T Pricing (USD) [1383862pcs Stock]

  • 1 pcs$0.02673
  • 5,000 pcs$0.02428
  • 10,000 pcs$0.02158
  • 25,000 pcs$0.02023
  • 50,000 pcs$0.01794

Part Number:
1N4006G-T
Manufacturer:
Diodes Incorporated
Detailed description:
DIODE GEN PURP 800V 1A DO41. Rectifiers 1.0A 800V
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Diodes Incorporated 1N4006G-T electronic components. 1N4006G-T can be shipped within 24 hours after order. If you have any demands for 1N4006G-T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4006G-T Product Attributes

Part Number : 1N4006G-T
Manufacturer : Diodes Incorporated
Description : DIODE GEN PURP 800V 1A DO41
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 800V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2µs
Current - Reverse Leakage @ Vr : 5µA @ 800V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AL, DO-41, Axial
Supplier Device Package : DO-41
Operating Temperature - Junction : -65°C ~ 175°C

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