FQPF9N25CYDTU Pricing (USD) [99980pcs Stock]
- 1 pcs$0.39304
- 800 pcs$0.39109
- Part Number:
- FQPF9N25CYDTU
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 250V 8.8A TO-220F.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Diodes - Rectifiers - Arrays, Diodes - Bridge Rectifiers and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQPF9N25CYDTU electronic components. FQPF9N25CYDTU can be shipped within 24 hours after order. If you have any demands for FQPF9N25CYDTU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQPF9N25CYDTU Product Attributes
Part Number :
FQPF9N25CYDTU
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 250V 8.8A TO-220F
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
250V
Current - Continuous Drain (Id) @ 25°C :
8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
430 mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
710pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
38W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220F-3 (Y-Forming)
Package / Case :
TO-220-3 Full Pack, Formed Leads
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